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dc.contributor.authorLing, Xi
dc.contributor.authorWang, Han
dc.contributor.authorHuang, Shengxi
dc.contributor.authorXia, Fengnian
dc.contributor.authorDresselhaus, Mildred
dc.date.accessioned2015-10-01T13:01:41Z
dc.date.available2015-10-01T13:01:41Z
dc.date.issued2015-04
dc.date.submitted2014-08
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttp://hdl.handle.net/1721.1/99120
dc.description.abstractOne hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-1004147)en_US
dc.language.isoen_US
dc.publisherNational Academy of Sciences (U.S.)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1073/pnas.1416581112en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceNational Academy of Sciences (U.S.)en_US
dc.titleThe renaissance of black phosphorusen_US
dc.typeArticleen_US
dc.identifier.citationLing, Xi, Han Wang, Shengxi Huang, Fengnian Xia, and Mildred S. Dresselhaus. “The Renaissance of Black Phosphorus.” Proc Natl Acad Sci USA 112, no. 15 (March 27, 2015): 4523–4530.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorLing, Xien_US
dc.contributor.mitauthorHuang, Shengxien_US
dc.contributor.mitauthorDresselhaus, Mildreden_US
dc.relation.journalProceedings of the National Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLing, Xi; Wang, Han; Huang, Shengxi; Xia, Fengnian; Dresselhaus, Mildred S.en_US
dc.identifier.orcidhttps://orcid.org/0000-0001-8492-2261
dc.identifier.orcidhttps://orcid.org/0000-0002-1955-3081
dc.identifier.orcidhttps://orcid.org/0000-0002-3618-9074
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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