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dc.contributor.authorAgarwal, Sapan
dc.contributor.authorTeherani, James T.
dc.contributor.authorHoyt, Judy L.
dc.contributor.authorAntoniadis, Dimitri A.
dc.contributor.authorYablonovitch, Eli
dc.date.accessioned2015-11-05T13:25:47Z
dc.date.available2015-11-05T13:25:47Z
dc.date.issued2014-04
dc.date.submitted2014-03
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.urihttp://hdl.handle.net/1721.1/99724
dc.description.abstractThe electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus ON-state conductance to find the optimal device design. Once the EH bilayer is optimized for a given ON-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40%-50%. Unlike Si and Ge, only the InAs case allows a manageable work function difference for EH bilayer transistor operation.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Center for Energy Efficient Electronics Science (Award 0939514)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TED.2014.2312939en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceOther univ. web domainen_US
dc.titleEngineering the Electron-Hole Bilayer Tunneling Field-Effect Transistoren_US
dc.typeArticleen_US
dc.identifier.citationAgarwal, Sapan, James T. Teherani, Judy L. Hoyt, Dimitri A. Antoniadis, and Eli Yablonovitch. “Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor.” IEEE Transactions on Electron Devices 61, no. 5 (May 2014): 1599–1606.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.mitauthorTeherani, James T.en_US
dc.contributor.mitauthorHoyt, Judy L.en_US
dc.contributor.mitauthorAntoniadis, Dimitri A.en_US
dc.relation.journalIEEE Transactions on Electron Devicesen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAgarwal, Sapan; Teherani, James T.; Hoyt, Judy L.; Antoniadis, Dimitri A.; Yablonovitch, Elien_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7778-8073
dc.identifier.orcidhttps://orcid.org/0000-0002-4836-6525
mit.licenseOPEN_ACCESS_POLICYen_US


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