Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration
Author(s)Zhang, Qian; Chere, Eyob Kebede; McEnaney, Kenneth; Yao, Mengliang; Cao, Feng; Ni, Yizhou; Chen, Shuo; Opeil, Cyril; Chen, Gang; Ren, Zhifeng; ... Show more Show less
MetadataShow full item record
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript −1] at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10[superscript 18]–10[superscript 19] cm[superscript −3]. Even though the highest room temperature power factor ≈3.3 × 10[superscript −3] W m[superscript −1] K[superscript −2] is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb[subscript 0.9925]Cr[subscript 0.0075]Se and ≈673 K for Pb[subscript 0.995]Cr[subscript 0.005]Se. The calculated device efficiency of Pb[subscript 0.995]Cr[subscript 0.005]Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering
Advanced Energy Materials
Zhang, Qian, Eyob Kebede Chere, Kenneth McEnaney, Mengliang Yao, Feng Cao, Yizhou Ni, Shuo Chen, Cyril Opeil, Gang Chen, and Zhifeng Ren. “Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration.” Adv. Energy Mater. 5, no. 8 (January 7, 2015): n/a–n/a.
Author's final manuscript