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dc.contributor.authorZhang, Qian
dc.contributor.authorChere, Eyob Kebede
dc.contributor.authorSun, Jingying
dc.contributor.authorCao, Feng
dc.contributor.authorDahal, Keshab
dc.contributor.authorChen, Shuo
dc.contributor.authorChen, Gang
dc.contributor.authorRen, Zhifeng
dc.date.accessioned2015-11-10T18:34:19Z
dc.date.available2015-11-10T18:34:19Z
dc.date.issued2015-06
dc.date.submitted2015-03
dc.identifier.issn1614-6832
dc.identifier.issn1614-6840
dc.identifier.urihttp://hdl.handle.net/1721.1/99891
dc.description.abstractIodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10[superscript 17] cm[superscript −3] (p-type) to 5.0 × 10[superscript 15] cm[superscript −3] (n-type) then to 2.0 × 10[superscript 17] cm[superscript −3] (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Science (Solid-State Solar-Thermal Energy Conversion Center Award DE-SC0001299)en_US
dc.language.isoen_US
dc.publisherWiley Blackwellen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/aenm.201500360en_US
dc.titleStudies on Thermoelectric Properties of n-type Polycrystalline SnSe[subscript 1-x]S[subscript x] by Iodine Dopingen_US
dc.typeArticleen_US
dc.identifier.citationZhang, Qian, Eyob Kebede Chere, Jingying Sun, Feng Cao, Keshab Dahal, Shuo Chen, Gang Chen, and Zhifeng Ren. “Studies on Thermoelectric Properties of N-Type Polycrystalline SnSe[subscript 1-x]S[subscript x] by Iodine Doping.” Advanced Energy Materials 5, no. 12 (June 2015): n/a – n/a.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorChen, Gangen_US
dc.relation.journalAdvanced Energy Materialsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhang, Qian; Chere, Eyob Kebede; Sun, Jingying; Cao, Feng; Dahal, Keshab; Chen, Shuo; Chen, Gang; Ren, Zhifengen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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