dc.contributor.author | Mehta, Karan Kartik | |
dc.contributor.author | Bruzewicz, Colin D. | |
dc.contributor.author | Sage, Jeremy M. | |
dc.contributor.author | Chiaverini, John | |
dc.contributor.author | Eltony, Amira | |
dc.contributor.author | Chuang, Isaac L. | |
dc.contributor.author | Ram, Rajeev J | |
dc.date.accessioned | 2015-11-13T17:37:45Z | |
dc.date.available | 2015-11-13T17:37:45Z | |
dc.date.issued | 2014-07 | |
dc.date.submitted | 2014-06 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/99931 | |
dc.description.abstract | We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays. | en_US |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency. Microsystems Technology Office | en_US |
dc.description.sponsorship | National Science Foundation (U.S.). Interdisciplinary Quantum Information Science & Engineering (iQuiSE) Program | en_US |
dc.description.sponsorship | United States. Dept. of Energy (Science Graduate Fellowship) | en_US |
dc.description.sponsorship | United States. Intelligence Advanced Research Projects Activity | en_US |
dc.description.sponsorship | United States. Dept. of Defense. Assistant Secretary of Defense for Research & Engineering (United States. Air Force Contract FA8721-05-C-0002) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Institute of Physics (AIP) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4892061 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | arXiv | en_US |
dc.title | Ion traps fabricated in a CMOS foundry | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Mehta, K. K., A. M. Eltony, C. D. Bruzewicz, I. L. Chuang, R. J. Ram, J. M. Sage, and J. Chiaverini. “Ion Traps Fabricated in a CMOS Foundry.” Applied Physics Letters 105, no. 4 (July 28, 2014): 044103. | en_US |
dc.contributor.department | Lincoln Laboratory | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
dc.contributor.department | MIT-Harvard Center for Ultracold Atoms | en_US |
dc.contributor.mitauthor | Mehta, Karan Kartik | en_US |
dc.contributor.mitauthor | Eltony, Amira M. | en_US |
dc.contributor.mitauthor | Bruzewicz, Colin D. | en_US |
dc.contributor.mitauthor | Chuang, Isaac | en_US |
dc.contributor.mitauthor | Ram, Rajeev J. | en_US |
dc.contributor.mitauthor | Sage, Jeremy M. | en_US |
dc.contributor.mitauthor | Chiaverini, John | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Original manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
dspace.orderedauthors | Mehta, K. K.; Eltony, A. M.; Bruzewicz, C. D.; Chuang, I. L.; Ram, R. J.; Sage, J. M.; Chiaverini, J. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0001-7296-523X | |
dc.identifier.orcid | https://orcid.org/0000-0002-0917-7182 | |
dc.identifier.orcid | https://orcid.org/0000-0003-0420-2235 | |
mit.license | OPEN_ACCESS_POLICY | en_US |
mit.metadata.status | Complete | |