MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Finding activation pathway of coupled displacive-diffusional defect processes in atomistics: Dislocation climb in fcc copper

Author(s)
Li, Ju; Lenosky, Thomas J.; Sarkar, Sanket; Cox, William T.; Bitzek, Erik; Wang, Yunzhi; ... Show more Show less
Thumbnail
DownloadSarkar-2012-Finding activation pathway of coupled displacive-diffusional defect.pdf (1.000Mb)
PUBLISHER_POLICY

Publisher Policy

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
The majority of solid-state deformation and transformation processes involve coupled displacive-diffusional mechanisms, of which a detailed atomic picture does not exist. We present here a complete atomistic description of one such process by which an extended edge dislocation in face-centered-cubic (fcc) metals may climb at finite temperature under supersaturation of vacancies. We employ an approach called “diffusive molecular dynamics,” which can capture the diffusional time scale while maintaining atomic resolution by coarse graining over atomic vibrations and evolving atomic density clouds. We find that, unlike the Thomson-Balluffi mechanism, if simultaneous displacive and diffusive events are allowed, a coupled displacive-diffusional pathway exists for extended double jog formation. Along this pathway, the activation energy is lower than the previous theoretical predictions and on par with the experimental observations.
Date issued
2012-07
URI
http://hdl.handle.net/1721.1/74503
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Sarkar, Sanket et al. “Finding Activation Pathway of Coupled Displacive-diffusional Defect Processes in Atomistics: Dislocation Climb in Fcc Copper.” Physical Review B 86.1 (2012). ©2012 American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.