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Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Author(s)
Jagannathan, Basanth; Wang, Jing; Sweeney, Susan; Li, Hongmei; Gogineni, Usha; del Alamo, Jesus A.; ... Show more Show less
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Abstract
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R[subscript sx]) through the gate-body capacitance feedback path at low to medium frequencies (< 20 GHz). At mm wave frequencies, the unilateral gain is affected by the R[subscript sx] through the drain-body capacitance pole, and deviates from the ideal -20 dB/dec slope. The impact of substrate resistance on f[subscript T], maximum available gain, high frequency noise and power characteristics of the devices is minimal.
Date issued
2009-06
URI
http://hdl.handle.net/1721.1/59339
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gogineni, U. et al. “Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices.” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE. 2009. 163-166. © 2009 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 10748456
ISBN
978-1-4244-3377-3
ISSN
1529-2517
Keywords
RF CMOS, Noise, Substrate resistance, maximum oscillation frequency, power gain, unilateral gain

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