dc.contributor.author | del Alamo, Jesus A. | |
dc.contributor.author | Wu, Joyce H. | |
dc.date.accessioned | 2010-10-29T15:54:12Z | |
dc.date.available | 2010-10-29T15:54:12Z | |
dc.date.issued | 2010-05 | |
dc.date.submitted | 2010-06 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | INSPEC Accession Number: 11340896 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/59587 | |
dc.description.abstract | We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF. | en_US |
dc.description.sponsorship | Applied Materials Graduate Fellowship | en_US |
dc.language.iso | en_US | |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/ted.2010.2045671 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | IEEE | en_US |
dc.subject | Ground inductance | en_US |
dc.subject | Si RF technology | en_US |
dc.subject | substrate crosstalk | en_US |
dc.subject | substrate via | en_US |
dc.subject | through-substrate via | en_US |
dc.subject | through-wafer interconnect | en_US |
dc.subject | through-wafer via | en_US |
dc.subject | via inductance | en_US |
dc.title | Fabrication and Characterization of Through-Substrate Interconnects | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.approver | del Alamo, Jesus A. | |
dc.contributor.mitauthor | del Alamo, Jesus A. | |
dc.contributor.mitauthor | Wu, Joyce H. | |
dc.relation.journal | IEEE Transactions on Electron Devices | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Wu, Joy; del Alamo, Jesús A. | en |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |