Grain Boundary Engineering for Improved Thin Silicon Photovoltaics
Author(s)Raghunathan, Rajamani; Johlin, Eric Carl; Grossman, Jeffrey C.
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In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in polycrystalline silicon is generally considered to be detrimental to the physical stability and electronic transport of the bulk material. However, at the extremum of disorder, amorphous silicon is known to have a beneficially increased band gap and enhanced optical absorption. This study is focused on understanding and utilizing the nature of the most commonly encountered Σ[subscript 3] GBs, in an attempt to balance incorporation of the advantageous properties of amorphous silicon while avoiding the degraded electronic transport of a fully amorphous system. A combination of theoretical methods is employed to understand the impact of ordered Σ[subscript 3] GBs on the material properties and full-device photovoltaic performance.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Mechanical Engineering
American Chemical Society (ACS)
Raghunathan, Rajamani, Eric Johlin, and Jeffrey C. Grossman. “Grain Boundary Engineering for Improved Thin Silicon Photovoltaics.” Nano Lett. 14, no. 9 (September 10, 2014): 4943–4950.
Author's final manuscript