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Topological Bloch bands in graphene superlattices

Author(s)
Song, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid
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Abstract
We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.
Date issued
2015-09
URI
http://hdl.handle.net/1721.1/102116
Department
Massachusetts Institute of Technology. Department of Physics
Journal
Proceedings of the National Academy of Sciences
Publisher
National Academy of Sciences (U.S.)
Citation
Song, Justin C. W., Polnop Samutpraphoot, and Leonid S. Levitov. “Topological Bloch Bands in Graphene Superlattices.” Proc Natl Acad Sci USA 112, no. 35 (August 18, 2015): 10879–10883.
Version: Final published version
ISSN
0027-8424
1091-6490

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