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dc.contributor.authorSong, Justin C. W.
dc.contributor.authorSamutpraphoot, Polnop
dc.contributor.authorLevitov, Leonid
dc.date.accessioned2016-04-04T16:39:58Z
dc.date.available2016-04-04T16:39:58Z
dc.date.issued2015-09
dc.date.submitted2014-12
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttp://hdl.handle.net/1721.1/102116
dc.description.abstractWe outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Science and Technology Center for Integrated Quantum Materialsen_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-1231319)en_US
dc.description.sponsorshipMassachusetts Institute of Technology. Institute for Soldier Nanotechnologies (Contract W911NF-13-D-0001)en_US
dc.language.isoen_US
dc.publisherNational Academy of Sciences (U.S.)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1073/pnas.1424760112en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceNational Academy of Sciences (U.S.)en_US
dc.titleTopological Bloch bands in graphene superlatticesen_US
dc.typeArticleen_US
dc.identifier.citationSong, Justin C. W., Polnop Samutpraphoot, and Leonid S. Levitov. “Topological Bloch Bands in Graphene Superlattices.” Proc Natl Acad Sci USA 112, no. 35 (August 18, 2015): 10879–10883.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorSong, Justin C. W.en_US
dc.contributor.mitauthorSamutpraphoot, Polnopen_US
dc.contributor.mitauthorLevitov, Leoniden_US
dc.relation.journalProceedings of the National Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsSong, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid S.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-4268-731X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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