Modelling hysteresis in vanadium dioxide oscillators

Author(s)
Datta, S.; Maffezzoni, P.; Narayanan, V.; Shukla, N.; Raychowdhury, A.; ... Show more
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Abstract
An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.
Date issued
2015-05
URI
http://hdl.handle.net/1721.1/102474
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Electronics Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Maffezzoni, P., S. Datta, V. Narayanan, N. Shukla, A. Raychowdhury, and L. Daniel. “Modelling Hysteresis in Vanadium Dioxide Oscillators.” Electronics Letters 51, no. 11 (May 28, 2015): 819–820.
Version: Author's final manuscript
ISSN
0013-5194
1350-911X
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