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dc.contributor.authorDatta, S.
dc.contributor.authorMaffezzoni, P.
dc.contributor.authorNarayanan, V.
dc.contributor.authorShukla, N.
dc.contributor.authorRaychowdhury, A.
dc.contributor.authorDaniel, Luca
dc.date.accessioned2016-05-12T17:32:51Z
dc.date.available2016-05-12T17:32:51Z
dc.date.issued2015-05
dc.identifier.issn0013-5194
dc.identifier.issn1350-911X
dc.identifier.urihttp://hdl.handle.net/1721.1/102474
dc.description.abstractAn original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1049/el.2015.0025en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Daniel via Phoebe Ayersen_US
dc.titleModelling hysteresis in vanadium dioxide oscillatorsen_US
dc.typeArticleen_US
dc.identifier.citationMaffezzoni, P., S. Datta, V. Narayanan, N. Shukla, A. Raychowdhury, and L. Daniel. “Modelling Hysteresis in Vanadium Dioxide Oscillators.” Electronics Letters 51, no. 11 (May 28, 2015): 819–820.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverDaniel, Lucaen_US
dc.contributor.mitauthorDaniel, Lucaen_US
dc.relation.journalElectronics Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsDatta, S.; Maffezzoni, P.; Narayanan, V.; Shukla, N.; Raychowdhury, A.; Daniel, L.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-5880-3151
mit.licenseOPEN_ACCESS_POLICYen_US


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