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dc.contributor.authorBoo, Hyun Ho
dc.contributor.authorBoning, Duane S.
dc.contributor.authorLee, Hae-Seung
dc.date.accessioned2016-06-08T20:05:00Z
dc.date.available2016-06-08T20:05:00Z
dc.date.issued2015-12
dc.date.submitted2015-06
dc.identifier.issn0018-9200
dc.identifier.issn1558-173X
dc.identifier.otherINSPEC Accession Number: 15618350
dc.identifier.urihttp://hdl.handle.net/1721.1/103067
dc.description.abstractThe virtual ground reference buffer (VGRB) technique is introduced as a means to improve the performance of switched-capacitor circuits. The technique enhances the performance by improving the feedback factor of the op-amp without affecting the signal gain. The bootstrapping action of the level-shifting buffers relaxes key op-amp performance requirements including unity-gain bandwidth, noise, open-loop gain and offset compared with conventional circuits. This reduces the design complexity and the power consumption of op-amp based circuits. Based on this technique, a 12 b pipelined ADC is implemented in 65 nm CMOS that achieves 67.0 dB SNDR at 250 MS/s and consumes 49.7 mW of power from a 1.2 V power supply.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSSC.2015.2467183en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Duane Boningen_US
dc.titleA 12b 250 MS/s Pipelined ADC With Virtual Ground Reference Buffersen_US
dc.typeArticleen_US
dc.identifier.citationBoo, Hyun H., Duane S. Boning, and Hae-Seung Lee. "A 12b 250 MS/s Pipelined ADC With Virtual Ground Reference Buffers." IEEE Journal of Solid-State Circuits 50:12 (2015), p.2912-2921.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverBoning, Duane S.en_US
dc.contributor.mitauthorBoo, Hyun Hoen_US
dc.contributor.mitauthorBoning, Duane S.en_US
dc.contributor.mitauthorLee, Hae-Seungen_US
dc.relation.journalIEEE Journal of Solid-State Circuitsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsBoo, Hyun H.; Boning, Duane S.; Lee, Hae-Seungen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7783-0403
dc.identifier.orcidhttps://orcid.org/0000-0002-0417-445X
mit.licenseOPEN_ACCESS_POLICYen_US


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