Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
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In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6° offcut has a tensile strain of 0.6%. This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. This discrepancy is due unintentional omission of the Si offcut angle and azimuth angle (φ) of the sample during high-resolution x-ray diffraction (HRXRD) measurement, and it has unfortunately resulted in a misleading result.
Date issued
2013-10Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Singapore-MIT Alliance in Research and Technology (SMART)Journal
Journal of Electronic Materials
Publisher
Springer US
Citation
Lee, Kwang Hong, Yew Heng Tan, Adam Jandl, Eugene A. Fitzgerald, and Chuan Seng Tan. “Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut.” Journal of Elec Materi 42, no. 12 (October 22, 2013): 3620–3621.
Version: Author's final manuscript
ISSN
0361-5235
1543-186X