Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
Author(s)Tan, Yew Heng; Lee, Kwang Hong; Jandl, Adam Christopher; Fitzgerald, Eugene A; Tan, Chuan Seng
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In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6° offcut has a tensile strain of 0.6%. This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. This discrepancy is due unintentional omission of the Si offcut angle and azimuth angle (φ) of the sample during high-resolution x-ray diffraction (HRXRD) measurement, and it has unfortunately resulted in a misleading result.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering; Singapore-MIT Alliance in Research and Technology (SMART)
Journal of Electronic Materials
Lee, Kwang Hong, Yew Heng Tan, Adam Jandl, Eugene A. Fitzgerald, and Chuan Seng Tan. “Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut.” Journal of Elec Materi 42, no. 12 (October 22, 2013): 3620–3621.
Author's final manuscript