Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Abstract

In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6° offcut has a tensile strain of 0.6%. This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. This discrepancy is due unintentional omission of the Si offcut angle and azimuth angle (φ) of the sample during high-resolution x-ray diffraction (HRXRD) measurement, and it has unfortunately resulted in a misleading result.