Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
Author(s)Jin, Donghyun; del Alamo, Jesus A
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We have investigated the impact of high-power (HP) stress on the dynamic ON-resistance (RON) in high-voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic RON measurement methodology which allows us to observe RON transients after an OFF-to-ON switching event from 200 ns up to any arbitrary length of time over many decades. We find that HP-stress results in much worsened dynamic RON especially in the sub-ms range with minor changes on a longer time scale. We attribute this to stress-induced generation of traps with relatively short time constants. These findings suggest that accumulated device operation that reaches out to the HP state under RF power or hard-switching conditions can result in undesirable degradation of dynamic RON on a short time scale.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Jin, Donghyun, and Jesús A. del Alamo. “Impact of High-Power Stress on Dynamic ON-Resistance of High-Voltage GaN HEMTs.” Microelectronics Reliability 52, no. 12 (December 2012): 2875–2879.