Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks
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Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.
Date issued
2015-06Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
2015 IEEE International Reliability Physics Symposium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
King, M. P.; Dickerson, J. R.; DasGupta, S.; Marinella, M. J.; Kaplar, R. J.; Piedra, D.; Sun, M. and Palacios, T. “Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO₂/AlGaN Gate Stacks.” 2015 IEEE International Reliability Physics Symposium (April 2015). © 2015 Institute of Electrical and Electronics Engineers (IEEE)
Version: Final published version
ISSN
1541-7026
1938-1891