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Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks

dc.contributor.authorKing, M. P.
dc.contributor.authorDickerson, J. R.
dc.contributor.authorDasGupta, S.
dc.contributor.authorMarinella, M. J.
dc.contributor.authorKaplar, R. J.
dc.contributor.authorPiedra, Daniel
dc.contributor.authorSun, Min
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2017-04-20T21:10:21Z
dc.date.available2017-04-20T21:10:21Z
dc.date.issued2015-06
dc.date.submitted2015-04
dc.identifier.issn1541-7026
dc.identifier.issn1938-1891
dc.identifier.urihttp://hdl.handle.net/1721.1/108328
dc.description.abstractRecovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IRPS.2015.7112689en_US
dc.titleTrapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacksen_US
dc.typeArticleen_US
dc.identifier.citationKing, M. P.; Dickerson, J. R.; DasGupta, S.; Marinella, M. J.; Kaplar, R. J.; Piedra, D.; Sun, M. and Palacios, T. “Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO₂/AlGaN Gate Stacks.” 2015 IEEE International Reliability Physics Symposium (April 2015). © 2015 Institute of Electrical and Electronics Engineers (IEEE)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverPalacios, Tomasen_US
dc.contributor.mitauthorPiedra, Daniel
dc.contributor.mitauthorSun, Min
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journal2015 IEEE International Reliability Physics Symposiumen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsKing, M. P.; Dickerson, J. R.; DasGupta, S.; Marinella, M. J.; Kaplar, R. J.; Piedra, D.; Sun, M.; Palacios, T.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-8104-9097
dc.identifier.orcidhttps://orcid.org/0000-0003-4858-8264
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licensePUBLISHER_POLICYen_US


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