High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
Author(s)Santos, Elton J. G.; Yu, Lili; Zubair, Ahmad; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomas; ... Show more Show less
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Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe₂ CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
American Chemical Society (ACS)
Yu, Lili; Zubair, Ahmad; Santos, Elton J. G.; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao and Palacios, Tomás. “ High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits .” Nano Letters 15, no. 8 (August 2015): 4928–4934. © 2015 American Chemical Society
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