Gate-Activated Photoresponse in a Graphene p–n Junction
Author(s)Lemme, Max C.; Koppens, Frank H. L.; Falk, Abram L.; Rudner, Mark S.; Park, Hongkun; Marcus, Charles M.; Levitov, Leonid; ... Show more Show less
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We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p–n junction is formed, allowing on–off control of photodetection. Photocurrents generated near p–n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
DepartmentMassachusetts Institute of Technology. Department of Physics
American Chemical Society (ACS)
Lemme, Max C., Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov, and Charles M. Marcus. “Gate-Activated Photoresponse in a Graphene P–n Junction.” Nano Lett. 11, no. 10 (October 12, 2011): 4134–4137.
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