| dc.contributor.author | Lemme, Max C. | |
| dc.contributor.author | Koppens, Frank H. L. | |
| dc.contributor.author | Falk, Abram L. | |
| dc.contributor.author | Rudner, Mark S. | |
| dc.contributor.author | Park, Hongkun | |
| dc.contributor.author | Marcus, Charles M. | |
| dc.contributor.author | Levitov, Leonid | |
| dc.date.accessioned | 2017-04-27T18:34:14Z | |
| dc.date.available | 2017-04-27T18:34:14Z | |
| dc.date.issued | 2011-08 | |
| dc.date.submitted | 2011-08 | |
| dc.identifier.issn | 1530-6984 | |
| dc.identifier.issn | 1530-6992 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/108463 | |
| dc.description.abstract | We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p–n junction is formed, allowing on–off control of photodetection. Photocurrents generated near p–n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions. | en_US |
| dc.description.sponsorship | Institute for Nanoelectronics Discovery and Exploration | en_US |
| dc.description.sponsorship | United States. Office of Naval Research. Multidisciplinary University Research Initiative. Graphene Approaches to Terahertz Electronics | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Chemical Society (ACS) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1021/nl2019068 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | Prof Levitov via Mat Willmott | en_US |
| dc.title | Gate-Activated Photoresponse in a Graphene p–n Junction | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Lemme, Max C., Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov, and Charles M. Marcus. “Gate-Activated Photoresponse in a Graphene P–n Junction.” Nano Lett. 11, no. 10 (October 12, 2011): 4134–4137. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
| dc.contributor.approver | Levitov, Leonid | en_US |
| dc.contributor.mitauthor | Levitov, Leonid | |
| dc.relation.journal | Nano Letters | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Lemme, Max C.; Koppens, Frank H. L.; Falk, Abram L.; Rudner, Mark S.; Park, Hongkun; Levitov, Leonid S.; Marcus, Charles M. | en_US |
| dspace.embargo.terms | N | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0002-4268-731X | |
| mit.license | PUBLISHER_POLICY | en_US |
