Infrared Topological Plasmons in Graphene
Author(s)
Jin, Dafei; Christensen, Thomas; Soljacic, Marin; Fang, Xuanlai; Lu, Ling; Zhang, Xiang; ... Show more Show less
DownloadPhysRevLett.118.245301.pdf (2.023Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We propose a two-dimensional plasmonic platform—periodically patterned monolayer graphene—which hosts topological one-way edge states operable up to infrared frequencies. We classify the band topology of this plasmonic system under time-reversal-symmetry breaking induced by a static magnetic field. At finite doping, the system supports topologically nontrivial band gaps with mid-gap frequencies up to tens of terahertz. By the bulk-edge correspondence, these band gaps host topologically protected one-way edge plasmons, which are immune to backscattering from structural defects and subject only to intrinsic material and radiation loss. Our findings reveal a promising approach to engineer topologically robust chiral plasmonic devices and demonstrate a realistic example of high-frequency topological edge states.
Date issued
2017-06Department
Massachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Physics; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Physical Review Letters
Publisher
American Physical Society
Citation
Jin, Dafei, Thomas Christensen, Marin Soljačić, Nicholas X. Fang, Ling Lu, and Xiang Zhang. “Infrared Topological Plasmons in Graphene.” Physical Review Letters 118, no. 24 (June 16, 2017).
Version: Final published version
ISSN
0031-9007
1079-7114