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dc.contributor.authorJin, Dafei
dc.contributor.authorChristensen, Thomas
dc.contributor.authorSoljacic, Marin
dc.contributor.authorFang, Xuanlai
dc.contributor.authorLu, Ling
dc.contributor.authorZhang, Xiang
dc.date.accessioned2017-06-23T13:33:39Z
dc.date.available2017-06-23T13:33:39Z
dc.date.issued2017-06
dc.date.submitted2017-02
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/110199
dc.description.abstractWe propose a two-dimensional plasmonic platform—periodically patterned monolayer graphene—which hosts topological one-way edge states operable up to infrared frequencies. We classify the band topology of this plasmonic system under time-reversal-symmetry breaking induced by a static magnetic field. At finite doping, the system supports topologically nontrivial band gaps with mid-gap frequencies up to tens of terahertz. By the bulk-edge correspondence, these band gaps host topologically protected one-way edge plasmons, which are immune to backscattering from structural defects and subject only to intrinsic material and radiation loss. Our findings reveal a promising approach to engineer topologically robust chiral plasmonic devices and demonstrate a realistic example of high-frequency topological edge states.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant No. CMMI-1120724)en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Multidisciplinary University Research Initiative (Award No. FA9550-12-1-0488)en_US
dc.description.sponsorshipVillum Foundationen_US
dc.description.sponsorshipDanish Council for Independent Research (Grant No. DFF – 6108-00667)en_US
dc.description.sponsorshipUnited States. Army Research Office. Institute for Soldier Nanotechnologies (Contract No. W911NF-13-D-0001)en_US
dc.description.sponsorshipChina. Ministry of Science and Technology. National Key Research and Development Program (Grant No. 2016YFA0302400)en_US
dc.description.sponsorshipChina. Ministry of Science and Technology. National Key Research and Development Program (Grant No. 2016YFA0302400)en_US
dc.description.sponsorshipChina. National Thousand-Young-Talents Programen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.118.245301en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleInfrared Topological Plasmons in Grapheneen_US
dc.typeArticleen_US
dc.identifier.citationJin, Dafei, Thomas Christensen, Marin Soljačić, Nicholas X. Fang, Ling Lu, and Xiang Zhang. “Infrared Topological Plasmons in Graphene.” Physical Review Letters 118, no. 24 (June 16, 2017).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Institute for Soldier Nanotechnologiesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorJin, Dafei
dc.contributor.mitauthorChristensen, Thomas
dc.contributor.mitauthorSoljacic, Marin
dc.contributor.mitauthorFang, Xuanlai
dc.contributor.mitauthorLu, Ling
dc.contributor.mitauthorZhang, Xiang
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-06-16T22:00:05Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsJin, Dafei; Christensen, Thomas; Soljačić, Marin; Fang, Nicholas X.; Lu, Ling; Zhang, Xiangen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-9813-2401
dc.identifier.orcidhttps://orcid.org/0000-0002-7184-5831
dc.identifier.orcidhttps://orcid.org/0000-0001-5713-629X
dc.identifier.orcidhttps://orcid.org/0000-0002-3130-8337
mit.licensePUBLISHER_POLICYen_US


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