Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Author(s)
Berhane, Amanuel M.; Bodrog, Zoltán; Fiedler, Saskia; Schröder, Tim; Gali, Adam; ... Show more
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Abstract
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
Date issued
2017-03
URI
http://hdl.handle.net/1721.1/110997
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
Advanced Materials
Publisher
Wiley Blackwell
Citation
Berhane, Amanuel M. et al. “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.” Advanced Materials 29, 12 (February 2017): 1605092 © 2017 WILEY-VCH Verlag GmbH & Co
Version: Original manuscript
ISSN
0935-9648
1521-4095
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