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Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

dc.contributor.authorBerhane, Amanuel M.
dc.contributor.authorBodrog, Zoltán
dc.contributor.authorFiedler, Saskia
dc.contributor.authorSchröder, Tim
dc.contributor.authorGali, Adam
dc.contributor.authorToth, Milos
dc.contributor.authorAharonovich, Igor
dc.contributor.authorJeong, Kwang-Yong
dc.contributor.authorSchroder, Tim
dc.contributor.authorVico Trivino, Noelia
dc.contributor.authorPalacios, Tomas
dc.contributor.authorEnglund, Dirk R.
dc.date.accessioned2017-08-21T19:50:26Z
dc.date.available2017-08-21T19:50:26Z
dc.date.issued2017-03
dc.date.submitted2016-12
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.urihttp://hdl.handle.net/1721.1/110997
dc.description.abstractRoom-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.en_US
dc.description.sponsorshipU.S. Army Research Laboratory (FA9550-14-1-0052)en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research (FA9550-14-1-0052)en_US
dc.language.isoen_US
dc.publisherWiley Blackwellen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/adma.201605092en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcearXiven_US
dc.titleBright Room-Temperature Single-Photon Emission from Defects in Gallium Nitrideen_US
dc.typeArticleen_US
dc.identifier.citationBerhane, Amanuel M. et al. “Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.” Advanced Materials 29, 12 (February 2017): 1605092 © 2017 WILEY-VCH Verlag GmbH & Coen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorJeong, Kwang-Yong
dc.contributor.mitauthorSchroder, Tim
dc.contributor.mitauthorVico Trivino, Noelia
dc.contributor.mitauthorPalacios, Tomas
dc.contributor.mitauthorEnglund, Dirk R.
dc.relation.journalAdvanced Materialsen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsBerhane, Amanuel M.; Jeong, Kwang-Yong; Bodrog, Zoltán; Fiedler, Saskia; Schröder, Tim; Triviño, Noelia Vico; Palacios, Tomás; Gali, Adam; Toth, Milos; Englund, Dirk; Aharonovich, Igoren_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-9017-0254
dc.identifier.orcidhttps://orcid.org/0000-0002-0588-3418
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licenseOPEN_ACCESS_POLICYen_US


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