Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications
Author(s)Xing, Weichuan; Liu, Zhihong; Ng, Geok Ing; Palacios, Tomas
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This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (f[subscript T]) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (I[subscript d−max]) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25 °C to 200 °C. For maximum f[subscript T], it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Xing, Weichuan et al. “Temperature Dependent Characteristics of InAlN/GaN HEMTs for Mm-Wave Applications.” Procedia Engineering 141 (2016): 103–107 © 2016 The Authors
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