High-speed modulator with interleaved junctions in zero-change CMOS photonics

Author(s)
Alloatti, Luca; Cheian, Dinis; Ram, Rajeev J
Thumbnail
DownloadRam_High-speed.pdf (1.729Mb)
PUBLISHER_POLICY
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
Date issued
2016-03
URI
http://hdl.handle.net/1721.1/111624
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Alloatti, L. et al. “High-Speed Modulator with Interleaved Junctions in Zero-Change CMOS Photonics.” Applied Physics Letters 108, 13 (March 2016): 131101 © 2016 AIP Publishing
Version: Final published version
ISSN
0003-6951
1077-3118
Collections