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dc.contributor.authorAlloatti, Luca
dc.contributor.authorCheian, Dinis
dc.contributor.authorRam, Rajeev J
dc.date.accessioned2017-09-22T15:08:55Z
dc.date.available2017-09-22T15:08:55Z
dc.date.issued2016-03
dc.date.submitted2016-02
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/111624
dc.description.abstractA microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (Award HR0011-11-C-0100)en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (Contract HR0011-11-9-0009)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4944999en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT Web Domainen_US
dc.titleHigh-speed modulator with interleaved junctions in zero-change CMOS photonicsen_US
dc.typeArticleen_US
dc.identifier.citationAlloatti, L. et al. “High-Speed Modulator with Interleaved Junctions in Zero-Change CMOS Photonics.” Applied Physics Letters 108, 13 (March 2016): 131101 © 2016 AIP Publishingen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorAlloatti, Luca
dc.contributor.mitauthorCheian, Dinis
dc.contributor.mitauthorRam, Rajeev J
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAlloatti, L.; Cheian, D.; Ram, R. J.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-1245-4179
dc.identifier.orcidhttps://orcid.org/0000-0003-0420-2235
mit.licensePUBLISHER_POLICYen_US


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