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High-speed modulator with interleaved junctions in zero-change CMOS photonics
| dc.contributor.author | Alloatti, Luca | |
| dc.contributor.author | Cheian, Dinis | |
| dc.contributor.author | Ram, Rajeev J | |
| dc.date.accessioned | 2017-09-22T15:08:55Z | |
| dc.date.available | 2017-09-22T15:08:55Z | |
| dc.date.issued | 2016-03 | |
| dc.date.submitted | 2016-02 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/111624 | |
| dc.description.abstract | A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions. | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (Award HR0011-11-C-0100) | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (Contract HR0011-11-9-0009) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics (AIP) | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.4944999 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT Web Domain | en_US |
| dc.title | High-speed modulator with interleaved junctions in zero-change CMOS photonics | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Alloatti, L. et al. “High-Speed Modulator with Interleaved Junctions in Zero-Change CMOS Photonics.” Applied Physics Letters 108, 13 (March 2016): 131101 © 2016 AIP Publishing | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
| dc.contributor.mitauthor | Alloatti, Luca | |
| dc.contributor.mitauthor | Cheian, Dinis | |
| dc.contributor.mitauthor | Ram, Rajeev J | |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Alloatti, L.; Cheian, D.; Ram, R. J. | en_US |
| dspace.embargo.terms | N | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0002-1245-4179 | |
| dc.identifier.orcid | https://orcid.org/0000-0003-0420-2235 | |
| mit.license | PUBLISHER_POLICY | en_US |
