Three-terminal resistive switch based on metal/metal oxide redox reactions
Author(s)
Huang, Mantao; Tan, Aik Jun; Mann, Maxwell; Bauer, Uwe; Ouedraogo, Raoul O.; Beach, Geoffrey Stephen; ... Show more Show less
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A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10 3 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current.
Date issued
2017-08Department
Lincoln Laboratory; Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Huang, Mantao, et al. “Three-Terminal Resistive Switch Based on Metal/metal Oxide Redox Reactions.” Scientific Reports 7, 1 (August 2017): 7452 © 2017 The Author(s)
Version: Final published version
ISSN
2045-2322