Evidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interface
Author(s)Liu, Wenqing; He, Liang; Zhou, Yan; Murata, Koichi; Jiang, Ying; Wang, Yong; Xu, Yongbing; Zhang, Rong; Wang, Kang. L.; Onbasli, Mehmet C.; Ross, Caroline A; ... Show more Show less
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One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T[subscript c] ). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi₂Se₃ by means of proximity to the high-T[subscript c] ferrimagnetic insulator (FMI) Y₃Fe₅O₁₂ and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi[subscript 2-x] Cr [subscript x] Se₃/Y₃Fe₅O₁₂ interface. We found that the Bi[subscript 2-x] Cr [subscript x] Se₃ grown on Y₃Fe₅O₁₂ (111) predominately contains Cr ³⁺ cations, and the spin direction of the Cr³⁺ is aligned parallel to that of tetrahedral Fe³⁺ of the YIG, revealing a ferromagnetic exchange coupling between the Bi [subscript 2-x] Cr [subscript x] Se₃ and the Y₃Fe₅O₁₂.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
American Institute of Physics (AIP)
Liu, Wenqing et al. “Evidence for Ferromagnetic Coupling at the Doped Topological Insulator/ferrimagnetic Insulator Interface.” AIP Advances 6, 5 (May 2016): 055813 © 2016 Author(s)
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