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dc.contributor.authorLiu, Wenqing
dc.contributor.authorHe, Liang
dc.contributor.authorZhou, Yan
dc.contributor.authorMurata, Koichi
dc.contributor.authorJiang, Ying
dc.contributor.authorWang, Yong
dc.contributor.authorXu, Yongbing
dc.contributor.authorZhang, Rong
dc.contributor.authorWang, Kang. L.
dc.contributor.authorOnbasli, Mehmet C.
dc.contributor.authorRoss, Caroline A
dc.date.accessioned2017-10-23T16:22:25Z
dc.date.available2017-10-23T16:22:25Z
dc.date.issued2016-03
dc.date.submitted2016-01
dc.identifier.issn2158-3226
dc.identifier.urihttp://hdl.handle.net/1721.1/111957
dc.description.abstractOne of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T[subscript c] ). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi₂Se₃ by means of proximity to the high-T[subscript c] ferrimagnetic insulator (FMI) Y₃Fe₅O₁₂ and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi[subscript 2-x] Cr [subscript x] Se₃/Y₃Fe₅O₁₂ interface. We found that the Bi[subscript 2-x] Cr [subscript x] Se₃ grown on Y₃Fe₅O₁₂ (111) predominately contains Cr ³⁺ cations, and the spin direction of the Cr³⁺ is aligned parallel to that of tetrahedral Fe³⁺ of the YIG, revealing a ferromagnetic exchange coupling between the Bi [subscript 2-x] Cr [subscript x] Se₃ and the Y₃Fe₅O₁₂.en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (N66001-12-1-4034)en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (N66001-11-1-4105)en_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4943157en_US
dc.rightsCreative Commons Attribution 4.0 International Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titleEvidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interfaceen_US
dc.typeArticleen_US
dc.identifier.citationLiu, Wenqing et al. “Evidence for Ferromagnetic Coupling at the Doped Topological Insulator/ferrimagnetic Insulator Interface.” AIP Advances 6, 5 (May 2016): 055813 © 2016 Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorOnbasli, Mehmet C.
dc.contributor.mitauthorRoss, Caroline A
dc.relation.journalAIP Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-10-17T15:57:06Z
dspace.orderedauthorsLiu, Wenqing; He, Liang; Zhou, Yan; Murata, Koichi; Onbasli, Mehmet C.; Ross, Caroline A.; Jiang, Ying; Wang, Yong; Xu, Yongbing; Zhang, Rong; Wang, Kang. L.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2262-1249
mit.licensePUBLISHER_CCen_US


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