Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
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We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.
Date issued
2016-02Department
Massachusetts Institute of Technology. Department of Mechanical EngineeringJournal
Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX;
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Kamboj, Varun S., et al. "Low-Bias Gate Tunable Terahertz Plasmonic Signatures in Chemical Vapour Deposited Graphene of Varying Grain Size." Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 13-18 February, 2016, San Francisco, California, edited by Laurence P. Sadwick and Tianxin Yang, 2016, p. 974707. © 2016 SPIE
Version: Final published version