Trench formation and corner rounding in vertical GaN power devices
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1.4983558 (1).pdf
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1.21 MB
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Checksum (MD5)
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Author(s)
Liu, Zhihong
Gao, Xiang
Zhang, Yuhao
Sun, Min
Piedra, Daniel
Hu, Jie
Palacios, Tomas
Date Issued
May 2017
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhang, Yuhao et al. “Trench Formation and Corner Rounding in Vertical GaN Power Devices.” Applied Physics Letters 110, 19 (May 2017): 193506
Version
Final published version
Abstract
Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500V was obtained in the device with flat-bottom rounded trenches, compared to 350V in the device with tapered-bottom rounded trenches and 150V in the device with nonrounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4983558
