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dc.contributor.authorLiu, Zhihong
dc.contributor.authorGao, Xiang
dc.contributor.authorZhang, Yuhao
dc.contributor.authorSun, Min
dc.contributor.authorPiedra, Daniel
dc.contributor.authorHu, Jie
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2018-06-04T17:24:01Z
dc.date.available2018-06-04T17:24:01Z
dc.date.issued2017-05
dc.date.submitted2017-02
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/116060
dc.description.abstractTrench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500V was obtained in the device with flat-bottom rounded trenches, compared to 350V in the device with tapered-bottom rounded trenches and 150V in the device with nonrounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices.en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttps://doi.org/10.1063/1.4983558en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceZhang, Yuhaoen_US
dc.titleTrench formation and corner rounding in vertical GaN power devicesen_US
dc.typeArticleen_US
dc.identifier.citationZhang, Yuhao et al. “Trench Formation and Corner Rounding in Vertical GaN Power Devices.” Applied Physics Letters 110, 19 (May 2017): 193506en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverZhang, Yuhaoen_US
dc.contributor.mitauthorZhang, Yuhao
dc.contributor.mitauthorSun, Min
dc.contributor.mitauthorPiedra, Daniel
dc.contributor.mitauthorHu, Jie
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhang, Yuhao; Sun, Min; Liu, Zhihong; Piedra, Daniel; Hu, Jie; Gao, Xiang; Palacios, Tomásen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2849-5653
dc.identifier.orcidhttps://orcid.org/0000-0003-4858-8264
dc.identifier.orcidhttps://orcid.org/0000-0002-8104-9097
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licensePUBLISHER_POLICYen_US


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