Design space and origin of off-state leakage in GaN vertical power diodes
Author(s)Wong, H.-Y.; Braga, N. A.; Mickevicius, R. V.; Jayanta Joglekar, Sameer; Palacios, Tomas; Sun, Min; Zhang, Yuhao; Yu, Lili; ... Show more Show less
Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microsystems Technology Laboratories
2015 IEEE International Electron Devices Meeting (IEDM)
Institute of Electrical and Electronics Engineers (IEEE)
Zhang, Y. et al. “Design Space and Origin of Off-State Leakage in GaN Vertical Power Diodes.” 2015 IEEE International Electron Devices Meeting (IEDM), 7-9 December 2015, Washington, DC, IEEE, 2015.
Author's final manuscript