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Design space and origin of off-state leakage in GaN vertical power diodes

dc.contributor.authorWong, H.-Y.
dc.contributor.authorBraga, N. A.
dc.contributor.authorMickevicius, R. V.
dc.contributor.authorJayanta Joglekar, Sameer
dc.contributor.authorPalacios, Tomas
dc.contributor.authorSun, Min
dc.contributor.authorZhang, Yuhao
dc.contributor.authorYu, Lili
dc.date.accessioned2018-06-27T17:14:42Z
dc.date.available2018-06-27T17:14:42Z
dc.date.issued2016-02
dc.date.submitted2015-12
dc.identifier.isbn978-1-4673-9894-7
dc.identifier.urihttp://hdl.handle.net/1721.1/116662
dc.description.abstractVariable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.en_US
dc.description.sponsorshipUnited States. Advanced Research Projects Agency-Energyen_US
dc.description.sponsorshipMIT Energy Initiativeen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IEDM.2015.7409830en_US
dc.titleDesign space and origin of off-state leakage in GaN vertical power diodesen_US
dc.typeArticleen_US
dc.identifier.citationZhang, Y. et al. “Design Space and Origin of Off-State Leakage in GaN Vertical Power Diodes.” 2015 IEEE International Electron Devices Meeting (IEDM), 7-9 December 2015, Washington, DC, IEEE, 2015.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverZhang, Yuhaoen_US
dc.contributor.mitauthorJayanta Joglekar, Sameer
dc.contributor.mitauthorPalacios, Tomas
dc.contributor.mitauthorSun, Min
dc.contributor.mitauthorZhang, Yuhao
dc.contributor.mitauthorYu, Lili
dc.relation.journal2015 IEEE International Electron Devices Meeting (IEDM)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhang, Y; Wong, H.-Y.; Sun, M.; Joglekar, S.; Yu, L.; Braga, N. A.; Mickevicius, R. V.; Palacios, T.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-3081-6425
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dc.identifier.orcidhttps://orcid.org/0000-0003-4858-8264
dc.identifier.orcidhttps://orcid.org/0000-0002-2849-5653
dc.identifier.orcidhttps://orcid.org/0000-0001-5777-8364


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