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Unconventional planar Hall effect in exchange-coupled topological insulator–ferromagnetic insulator heterostructures

Author(s)
Wang, Fei; Zhao, Weiwei; Chan, Moses H. W.; Liu, Chaoxing; Rakhmilevich, David; Moodera, Jagadeesh; Chang, Cui-zu; ... Show more Show less
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Abstract
The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magnetotransport phenomena. Here we report the experimental observation of an unconventional planar Hall effect (PHE) and a gate-tunable hysteretic planar magnetoresistance in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchange-coupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the electric current. This behavior differs from previous observations of the PHE in ferromagnets and semiconductors. Furthermore, as the thickness of the 3D TI films is reduced into the 2D limit, in which the Dirac SSs develop a hybridization gap, we find a suppression of the PHE around the charge-neutral point indicating the vital role of Dirac SSs in this phenomenon. To explain our findings, we outline a symmetry argument that excludes linear Hall mechanisms and suggest two possible nonlinear Hall mechanisms that can account for all the essential qualitative features in our observations.
Date issued
2018-09
URI
http://hdl.handle.net/1721.1/117672
Department
Massachusetts Institute of Technology. Department of Physics; Massachusetts Institute of Technology. Plasma Science and Fusion Center; Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
Journal
Physical Review B
Publisher
American Physical Society
Citation
Rakhmilevich, David, et al. “Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator–Ferromagnetic Insulator Heterostructures.” Physical Review B, vol. 98, no. 9, Sept. 2018. © 2018 American Physical Society
Version: Final published version
ISSN
2469-9950
2469-9969

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