Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
Author(s)Chang, Kai; Liu, Junwei; Lin, Haicheng; Wang, Na; Zhao, Kun; Zhang, Anmin; Jin, Feng; Zhong, Yong; Hu, Xiaopeng; Duan, Wenhui; Zhang, Qingming; Fu, Liang; Xue, Qi-Kun; Chen, Xi; Ji, Shuai-Hua; ... Show more Show less
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Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature Tcof 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature.The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.
DepartmentMassachusetts Institute of Technology. Department of Physics
American Association for the Advancement of Science (AAAS)
Chang, Kai et al. “Discovery of Robust in-Plane Ferroelectricity in Atomic-Thick SnTe.” Science 353, 6296 (July 2016): 274–278 © 2016 American Association for the Advancement of Science
Author's final manuscript