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Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

dc.contributor.authorChang, Kai
dc.contributor.authorLiu, Junwei
dc.contributor.authorLin, Haicheng
dc.contributor.authorWang, Na
dc.contributor.authorZhao, Kun
dc.contributor.authorZhang, Anmin
dc.contributor.authorJin, Feng
dc.contributor.authorZhong, Yong
dc.contributor.authorHu, Xiaopeng
dc.contributor.authorDuan, Wenhui
dc.contributor.authorZhang, Qingming
dc.contributor.authorFu, Liang
dc.contributor.authorXue, Qi-Kun
dc.contributor.authorChen, Xi
dc.contributor.authorJi, Shuai-Hua
dc.date.accessioned2018-09-13T18:08:50Z
dc.date.available2018-09-13T18:08:50Z
dc.date.issued2016-07
dc.date.submitted2015-11
dc.identifier.issn0036-8075
dc.identifier.issn1095-9203
dc.identifier.urihttp://hdl.handle.net/1721.1/117744
dc.description.abstractStable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature Tcof 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature.The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.en_US
dc.description.sponsorshipUnited States. Department of Energy (Award DE-SC0010526)en_US
dc.publisherAmerican Association for the Advancement of Science (AAAS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1126/SCIENCE.AAD8609en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceOther repositoryen_US
dc.titleDiscovery of robust in-plane ferroelectricity in atomic-thick SnTeen_US
dc.typeArticleen_US
dc.identifier.citationChang, Kai et al. “Discovery of Robust in-Plane Ferroelectricity in Atomic-Thick SnTe.” Science 353, 6296 (July 2016): 274–278 © 2016 American Association for the Advancement of Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorLiu, Junwei
dc.contributor.mitauthorFu, Liang
dc.relation.journalScienceen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-09-13T16:43:47Z
dspace.orderedauthorsChang, Kai; Liu, Junwei; Lin, Haicheng; Wang, Na; Zhao, Kun; Zhang, Anmin; Jin, Feng; Zhong, Yong; Hu, Xiaopeng; Duan, Wenhui; Zhang, Qingming; Fu, Liang; Xue, Qi-Kun; Chen, Xi; Ji, Shuai-Huaen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-8051-7349
dc.identifier.orcidhttps://orcid.org/0000-0002-8803-1017
mit.licenseOPEN_ACCESS_POLICYen_US


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