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Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Author(s)
Zhang, Yuhao; Sun, Min; Perozek, Joshua A.; Liu, Zhihong; Zubair, Ahmad; Piedra, Daniel; Chowdhury, Nadim; Gao, Xiang; Shepard, Kenneth; Palacios, Tomas; ... Show more Show less
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Abstract
This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between the conduction and switching power losses. Our GaN vertical FinFETs exhibit high-frequency (MHz) switching capabilities and superior switching FOMs when compared with commercial 0.9-1.2-kV Si and SiC power transistors. This letter shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics.
Date issued
2018-11
URI
https://hdl.handle.net/1721.1/121563
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhang, Yuhao et al. "Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit." IEEE Electron Device Letters 40, 1 (January 2019): 75 - 78 © 2018 IEEE
Version: Author's final manuscript
ISSN
0741-3106
1558-0563

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