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dc.contributor.authorChowdhury, Nadim
dc.contributor.authorAntoniadis, Dimitri A.
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2019-07-10T17:22:07Z
dc.date.available2019-07-10T17:22:07Z
dc.date.issued2017-05
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.urihttps://hdl.handle.net/1721.1/121568
dc.description.abstractWe study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff = 1 nA/μm and VGS = VDS = VCC = 0.5 V. These results represent: 1) ∼ 15% higher Ion than Si-NW-nFET and 2) ∼ 17% better Q than Si-NW-nFET, all with Lg = 5 nm, thus suggesting the GaN n-channel, an intriguing option for application in logic at sub-10-nm channel length. The superior performance of the GaN channel compared with Si and other semiconductors at this scaled dimension can be attributed to its relatively higher effective mass of electron and lower permittivity.en_US
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/LED.2017.2703953en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceOther repositoryen_US
dc.titleGaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronicsen_US
dc.typeArticleen_US
dc.identifier.citationChowdhury, Nadim, Giuseppe Iannaccone, Gianluca Fiori, Dimitri A. Antoniadis and Tomás Palacios. "GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics." Electron Device Letters 38, issue 7 (July 2017): pp. 859 - 862.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.relation.journalElectron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-07-01T12:39:55Z
dspace.date.submission2019-07-01T12:39:59Z
mit.journal.volume38en_US
mit.journal.issue7en_US


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