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Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

Author(s)
Leong, Wei Sun; Ji, Qingqing; Mao, Nannan; Wang, Haozhe; Goodman, Aaron Jacob; Vignon, Mikpongbeho Antoine; Su, Cong; Guo, Yunfan; Shen, Pin-Chun; Gao, Zhenfei; Tisdale, William; Muller, David A.; Kong, Jing; ... Show more Show less
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Abstract
Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS₂ in such junctions was revealed to nucleate from the vertices of multilayered VS₂ crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS₂, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics.
Date issued
2018-09-20
URI
https://hdl.handle.net/1721.1/121574
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Chemistry; Massachusetts Institute of Technology. Department of Chemical Engineering; Massachusetts Institute of Technology. Department of Nuclear Science and Engineering; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Journal of the American Chemical Society
Publisher
American Chemical Society (ACS)
Citation
Leong, Wei Sun et al. "Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides." Journal of the American Chemical Society 140, 39 (September 2018): 12354-12358 © 2018 American Chemical Society
Version: Author's final manuscript
ISSN
0002-7863
1520-5126

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