dc.contributor.author | Leong, Wei Sun | |
dc.contributor.author | Ji, Qingqing | |
dc.contributor.author | Mao, Nannan | |
dc.contributor.author | Wang, Haozhe | |
dc.contributor.author | Goodman, Aaron Jacob | |
dc.contributor.author | Vignon, Mikpongbeho Antoine | |
dc.contributor.author | Su, Cong | |
dc.contributor.author | Guo, Yunfan | |
dc.contributor.author | Shen, Pin-Chun | |
dc.contributor.author | Gao, Zhenfei | |
dc.contributor.author | Tisdale, William | |
dc.contributor.author | Muller, David A. | |
dc.contributor.author | Kong, Jing | |
dc.date.accessioned | 2019-07-10T18:12:43Z | |
dc.date.available | 2019-07-10T18:12:43Z | |
dc.date.issued | 2018-09-20 | |
dc.date.submitted | 2018-07 | |
dc.identifier.issn | 0002-7863 | |
dc.identifier.issn | 1520-5126 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/121574 | |
dc.description.abstract | Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS₂ in such junctions was revealed to nucleate from the vertices of multilayered VS₂ crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS₂, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics. | en_US |
dc.description.sponsorship | Air Force Office of Scientific Research (Grant FA9550-15-1-0514) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Grant EFRI-1542815) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Grant DMR-1507806) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Grant DMR/ECCS-1509197) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Award 0939514) | en_US |
dc.description.sponsorship | United States. Department of Energy (Grant DE-SC0010538) | en_US |
dc.language.iso | en | |
dc.publisher | American Chemical Society (ACS) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1021/jacs.8b07806 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | Other repository | en_US |
dc.title | Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Leong, Wei Sun et al. "Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides." Journal of the American Chemical Society 140, 39 (September 2018): 12354-12358 © 2018 American Chemical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Chemistry | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Chemical Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.relation.journal | Journal of the American Chemical Society | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2019-06-26T18:25:41Z | |
dspace.date.submission | 2019-06-26T18:25:42Z | |
mit.journal.volume | 140 | en_US |
mit.journal.issue | 39 | en_US |