MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks

Author(s)
Biswas, Avishek; Chandrakasan, Anantha P
Thumbnail
DownloadJSSC2019_manuscript.pdf (5.172Mb)
Terms of use
Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
Metadata
Show full item record
Abstract
This paper presents an energy-efficient static random access memory (SRAM) with embedded dot-product computation capability, for binary-weight convolutional neural networks. A 10T bit-cell-based SRAM array is used to store the 1-b filter weights. The array implements dot-product as a weighted average of the bitline voltages, which are proportional to the digital input values. Local integrating analog-to-digital converters compute the digital convolution outputs, corresponding to each filter. We have successfully demonstrated functionality (>98% accuracy) with the 10 000 test images in the MNIST hand-written digit recognition data set, using 6-b inputs/outputs. Compared to conventional full-digital implementations using small bitwidths, we achieve similar or better energy efficiency, by reducing data transfer, due to the highly parallel in-memory analog computations.
Date issued
2018-12
URI
https://hdl.handle.net/1721.1/122468
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Journal of Solid-State Circuits
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Biswas, Avishek and Anantha P. Chandrakasan. "CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks." IEEE Journal of Solid-State Circuits 54, 1 (January 2019): 217 - 230 © 2018 IEEE
Version: Author's final manuscript
ISSN
0018-9200
1558-173X

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.