CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks
Author(s)
Biswas, Avishek; Chandrakasan, Anantha P
DownloadJSSC2019_manuscript.pdf (5.172Mb)
Terms of use
Metadata
Show full item recordAbstract
This paper presents an energy-efficient static random access memory (SRAM) with embedded dot-product computation capability, for binary-weight convolutional neural networks. A 10T bit-cell-based SRAM array is used to store the 1-b filter weights. The array implements dot-product as a weighted average of the bitline voltages, which are proportional to the digital input values. Local integrating analog-to-digital converters compute the digital convolution outputs, corresponding to each filter. We have successfully demonstrated functionality (>98% accuracy) with the 10 000 test images in the MNIST hand-written digit recognition data set, using 6-b inputs/outputs. Compared to conventional full-digital implementations using small bitwidths, we achieve similar or better energy efficiency, by reducing data transfer, due to the highly parallel in-memory analog computations.
Date issued
2018-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Journal of Solid-State Circuits
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Biswas, Avishek and Anantha P. Chandrakasan. "CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks." IEEE Journal of Solid-State Circuits 54, 1 (January 2019): 217 - 230 © 2018 IEEE
Version: Author's final manuscript
ISSN
0018-9200
1558-173X