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dc.contributor.authorBiswas, Avishek
dc.contributor.authorChandrakasan, Anantha P
dc.date.accessioned2019-10-08T15:44:28Z
dc.date.available2019-10-08T15:44:28Z
dc.date.issued2018-12
dc.date.submitted2018-10
dc.identifier.issn0018-9200
dc.identifier.issn1558-173X
dc.identifier.urihttps://hdl.handle.net/1721.1/122468
dc.description.abstractThis paper presents an energy-efficient static random access memory (SRAM) with embedded dot-product computation capability, for binary-weight convolutional neural networks. A 10T bit-cell-based SRAM array is used to store the 1-b filter weights. The array implements dot-product as a weighted average of the bitline voltages, which are proportional to the digital input values. Local integrating analog-to-digital converters compute the digital convolution outputs, corresponding to each filter. We have successfully demonstrated functionality (>98% accuracy) with the 10 000 test images in the MNIST hand-written digit recognition data set, using 6-b inputs/outputs. Compared to conventional full-digital implementations using small bitwidths, we achieve similar or better energy efficiency, by reducing data transfer, due to the highly parallel in-memory analog computations.en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/jssc.2018.2880918en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Chandrakasan via Phoebe Ayersen_US
dc.titleCONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networksen_US
dc.typeArticleen_US
dc.identifier.citationBiswas, Avishek and Anantha P. Chandrakasan. "CONV-SRAM: An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks." IEEE Journal of Solid-State Circuits 54, 1 (January 2019): 217 - 230 © 2018 IEEEen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalIEEE Journal of Solid-State Circuitsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.identifier.doi10.1109/JSSC.2018.2880918en_US
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dc.identifier.doi10.1109/JSSC.2018.2880918
dspace.date.submission2019-10-02T15:59:58Z
mit.journal.volume54en_US
mit.journal.issue1en_US


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