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Propagation of THz acoustic wave packets in GaN at room temperature

Author(s)
Maznev, Alexei; Hung, T.-C.; Yao, Y.-T.; Chou, T.-H.; Gandhi, J. S.; Lindsay, L.; Shin, H. D.; Stokes, D. W.; Forrest, R. L.; Bensaoula, A.; Sun, C.-K.; Nelson, Keith Adam; ... Show more Show less
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Abstract
We use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1-1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.
Date issued
2018-02-06
URI
https://hdl.handle.net/1721.1/123669
Department
Massachusetts Institute of Technology. Department of Chemistry
Journal
Applied Physics Letters
Publisher
AIP Publishing LLC
Citation
Maznev, Alexei et al. "Propagation of THz acoustic wave packets in GaN at room temperature." Applied Physics Letters, 112, 6, (February 2018): 061903 © 2018 Authors
Version: Final published version
ISSN
0003-6951
1077-3118
Keywords
Physics and Astronomy (miscellaneous)

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