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dc.contributor.authorMaznev, Alexei
dc.contributor.authorHung, T.-C.
dc.contributor.authorYao, Y.-T.
dc.contributor.authorChou, T.-H.
dc.contributor.authorGandhi, J. S.
dc.contributor.authorLindsay, L.
dc.contributor.authorShin, H. D.
dc.contributor.authorStokes, D. W.
dc.contributor.authorForrest, R. L.
dc.contributor.authorBensaoula, A.
dc.contributor.authorSun, C.-K.
dc.contributor.authorNelson, Keith Adam
dc.date.accessioned2020-01-23T23:13:38Z
dc.date.available2020-01-23T23:13:38Z
dc.date.issued2018-02-06
dc.date.submitted2017-10-10
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1721.1/123669
dc.description.abstractWe use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1-1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Award DE-FG02-00ER15087)en_US
dc.language.isoen
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.5008852en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceOther repositoryen_US
dc.subjectPhysics and Astronomy (miscellaneous)en_US
dc.titlePropagation of THz acoustic wave packets in GaN at room temperatureen_US
dc.typeArticleen_US
dc.identifier.citationMaznev, Alexei et al. "Propagation of THz acoustic wave packets in GaN at room temperature." Applied Physics Letters, 112, 6, (February 2018): 061903 © 2018 Authorsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-12-30T19:03:17Z
dspace.date.submission2019-12-30T19:03:25Z
mit.journal.volume112en_US
mit.journal.issue6en_US


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