Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm
Author(s)Singh, Neetesh Kumar; Xin, Ming; Vermeulen, Diedrik Rene Georgette; Shtyrkova, Katia; Li, Nanxi; Callahan, Patrick T; Magden, Emir Salih; Ruocco, Alfonso; Fahrenkopf, Nicholas; Baiocco, Christopher; Kuo, Bill P-P; Radic, Stojan; Ippen, Erich Peter; Kartner, Franz X.; Watts, Michael; ... Show more Show less
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Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 μm, with a −20 dB bandwidth covering 1.124–2.4 μm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (−35 dB bandwidth). We also measured the coherence over an octave, obtaining [InlineEquation not available: see fulltext.], in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.
DepartmentMassachusetts Institute of Technology. Research Laboratory of Electronics
Light: Science and Applications
Springer Science and Business Media LLC
Singh, Neetesh, et al. "Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm." Light: Science & Applications 7 (September 2017): 17131 © 2018, The Author(s).
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