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Enhancement of Optical Response in Nanowires by Negative-Tone PMMA Lithography

Author(s)
Charaev, Ilya; Dane, Andrew; Agarwal, Akshay; Berggren, Karl K.
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Abstract
The method of negative-tone polymethyl methacrylate (PMMA) electron-beam lithography is investigated to improve the performance of nanowire-based superconducting detectors. Using this approach, the superconducting nanowire single-photon detectors (SNSPDs) have been fabricated from 5-nm-thick NbN film sputtered at room temperature. To investigate the impact of this process, SNSPDs were prepared by positive-tone- and negative-tone-PMMA lithography, and their electrical and photodetection characteristics at 4.2 K were compared. The SNSPDs made by negative-tone-PMMA lithography show higher critical-current density and higher photon count rate at various wavelengths. Our results suggest a higher negative-tone-PMMA technology may be preferable to the standard positive-tone-PMMA lithography for this application. Keywords: Films; Nanowires; Lithography; Temperature measurement; Detectors; Current measurement; Niobium compounds
Date issued
2019-02
URI
https://hdl.handle.net/1721.1/124559
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Transactions on Applied Superconductivity
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Charaev, Ilya et al "Enhancement of Optical Response in Nanowires by Negative-Tone PMMA Lithography." IEEE Transactions on Applied Superconductivity 29, 5 (August 2019): 1100905 ©2019 IEEE.
Version: Original manuscript
ISSN
1051-8223
1558-2515
2378-7074

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